gu-e photomos (aqv414e, aqv41 ? eh) types *indicate the peak ac and dc values. note: for space reasons, the smd terminal shape indicator a and the package type indicator x and z are omitted from the seal. general use and economy type. dip (1 form b) 6-pin type. reinforced insulation 5,000v type. gu-e photomos (aqv414e, a qv41 ? eh) type i/o isolation voltage output rating* part no. pac king quantity through hole terminal surface-mount terminal load voltage load current tube packing style tape and reel packing style tube tape and reel picked from the 1/2/3-pin side picked from the 4/5/6-pin side ac/dc type 1,500 v ac (standard) 400 v 120 ma aqv414e AQV414EA AQV414EAx AQV414EAz 1 tube contains 50 pcs. 1 batch contains 500 pcs. 1,000 pcs. 5,000 v ac (reinforced) 60 v 550 ma aqv412eh aqv412eha aqv412ehax aqv412ehaz 350 v 130 ma aqv410eh aqv410eha aqv410ehax aqv410ehaz 400 v 120 ma aqv414eh aqv414eha aqv414ehax aqv414ehaz testing (reinforced type)(standard type) (aqv410eh, 414eh) (aqv410eh, 414eh) vde (aqv412eh) vde mm inch features 1. 60v type couples high capacity (0.55a) with low on-resistance (1 ? ). item gu-e (1 form b type) type pa rt no. aqv410eh aqv412eh load voltage 350v 60v continuous load current 0.13a 0.55a on resistance (typ.) 18 ? 1 ? 8.8 .346 6.4 .252 3.6 .142 8.8 .346 6.4 .252 3.9 .154 1 2 3 6 5 4 2. this is the low-cost version photomos 1 form b output type relay. compared to the previous gu photomos 1 form b type relay, the attainment of an economical price that is approximately 22% lower will further broaden its market. 3. normally closed type (2 form b) is low on-resistance. (all aq ? 4 photomos are form b types. and also the form a types have a low on-resistance.) this has been realized thanks to the built-in mosfet processed by our proprietary method, dsd (double- diffused and selective doping) method. 4. controls low-level analog signals photomos relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. source electrode n C n + n + n + p + n + n + p + gate electrode passivation membrane cross section of the normally-closed type of power mos intermediate insulating membrane gate oxidation membrane drain electrode 5. high sensitivity, low on resistance can control a maximum 0.13 a load current with a 5 ma input current. low on resistance of 18 ? (aqv410eh). stable operation because there are no metallic contact parts. 6. low-level off-state leakage current the ssr has an off-state leakage current of several milliamperes, whereas the photomos relay has typ. 100 pa even with the rated load voltage of 400 v (aqv414e). 7. reinforced insulation 5,000 v type also available. more than 0.4 mm internal insulation distance between inputs and outputs. conforms to en41003, en60950 (reinforced insulation). typical applications ? power supply ? measuring equipment ? security equipment ? telephone equipment ? sensors new all rights rese r v ed ?c opyright matsushita elect r ic w o r k s , ltd.
gu-e photomos (aqv414e, aqv41 ? eh) rating 2. electrical characteristics (ambient temperature: 25 c 77 f ) note: recommendable led forward current standard type i f = 5 ma reinforced type i f = 5 to 10 ma *operate/reverse time item symbol type of connec- tion a qv414e(a) aqv412eh(a) aqv410eh(a) aqv414eh(a) condition input led operate (off) current typical i foff 1.45 ma 1.9 ma 1.9 ma 1.9 ma i l = max. maximum 3.0 ma led reverse (on) current minimum i fon 0.3 ma 0.4 ma 0.4 ma 0.4 ma i l = max. typical 1.40 ma 1.8 ma 1.8 ma 1.8 ma led dropout voltage typical v f 1.25 v (1.14 v at i f = 5 ma) i f = 50 ma maximum 1.5 v output on resistance typical r on a 26 ? 1 ? 18 ? 25.2 ? i f = 0 ma i l = max. within 1 s on time maximum 50 ? 2.5 ? 35 ? 50 ? typical r on b 20 ? 0.55 ? 13 ? 19 ? i f = 0 ma i l = max. within 1 s on time maximum 25 ? 1.3 ? 17.5 ? 25 ? typical r on c 10 ? 0.3 ? 6.5 ? 10 ? i f = 0 ma i l = max. within 1 s on time maximum 12.5 ? 0.7 ? 8.8 ? 12.5 ? off state leakage current maximum i leak 1 a 10 a 10 a 10 a i f = 5 ma v l = max. tr ansfer characteristics switching speed operate (off) time* typical t off 0.7 ms 3 ms 1.5 ms 1.3 ms i f = 0 ma ? 5 ma i l = max. maximum 2.0 ms 10 ms 3.0 ms 3.0 ms reverse (on) time* typical t on 0.1 ms 0.3 ms 0.3 ms 0.3 ms i f = 5 ma ? 0 ma i l = max. maximum 1.0 ms 1.5 ms 1.5 ms 1.5 ms i/o capacitance typical c iso 0.8 pf f = 1 mhz v b = 0 v maximum 1.5 pf initial i/o isolation resistance minimum r iso 1,000 m ? 500 v dc 1. absolute maximum ratings (ambient temperature: 25 c 77 f ) item symbol type of connection a qv414e(a) aqv412eh(a) aqv410eh(a) aqv414eh(a) remarks input led forward current i f 50 ma led reverse voltage v r 5 v peak forwrd current i fp 1 a f = 100 hz, duty factor = 0.1% pow er dissipation p in 75 mw output load voltage (peak ac) v l 400 v 60 v 350 v 400 v continuous load current i l a 0.12 a 0.55 a 0.13 a 0.12 a a connection: peak ac, dc b,c connection: dc b 0.13 a 0.65 a 0.15 a 0.13 a c 0.15 a 0.8 a 0.17 a 0.15 a peak load current i peak 0.3 a 1.5 a 0.4 a 0.3 a a connection: 100 ms (1 shot), v l = dc pow er dissipation p out 500 mw total power dissipation p t 550 mw i/o isolation voltage v iso 1,500 v ac 5,000 v ac temperature limits operating t opr C40 c to +85 c C40 f to +185 f non-condensing at low temperatures storage t stg C40 c to +100 c C40 f to +212 f toff input output 10% 90% ton all rights rese r v ed ?c opyright matsushita elect r ic w o r k s , ltd.
gu-e photomos (aqv414e, aqv41 ? eh) reference data 1-(1). load current vs. ambient temperature characteristics allowable ambient temperature: C40 c to +85 c C40 f to +185 f type of connection: a 1-(2). load current vs. ambient temperature characteristics allowable ambient temperature: C40 c to +85 c C40 f to +185 f type of connection: a 2. on resistance vs. ambient temperature characteristics measured portion: between terminals 4 and 6; led current: 0 ma; load voltage: max. (dc); continuous load current: max. (dc) ambient temperature, c load current, ma 0 40 60 80 100 140 120 0204060 80 100C40 C20 20 85 aqv410eh aqv414e(h) load current, ma 0 200 300 400 500 700 ambient temperature, c 600 0204060 80 100-40 -20 100 85 aqv412eh on resistance, ? 0 10 20 30 40 -40 -20 50 0204060 8085 ambient temperature, c aqv410eh aqv414e(h) aqv412eh 3. operate (off) time vs. ambient temperature characteristics led current: 5ma; load voltage: max. (dc); continuous load current: max. (dc) 4. reverse (on) time vs. ambient temperature characteristics led current: 5 ma; load voltage: max. (dc); continuous load current: max. (dc) 5. led operate (off) current vs. ambient temperature characteristics load voltage: max. (dc); continuous load current: max. (dc) operate (off) time, ms 0 2.0 3.0 ambient temperature, c -40 -20 5.0 0204060 80 1.0 4.0 85 aqv414e aqv410eh?aqv414eh aqv412eh reverse (on) time, ms 0-20-40 20 40 60 80 85 ambient temperature, c 0.8 0.6 0.4 0.2 0 aqv410eh aqv414e aqv414eh aqv412eh led operate (off) curremt, ma 0 1 2 3 4 ambient temperature, c -40 -20 5 0204060 8085 aqv414e aqv412eh?aqv410eh?aqv414eh 6. led reverse (on) current vs. ambient temperature characteristics load voltage: max. (dc); continuous load current: max. (dc) 7. led dropout voltage vs. ambient temperature characteristics sample: all types; led current: 5 to 50 ma 8-(1). current vs. voltage characteristics of output at mos portion measured portion: between terminals 4 and 6; ambient temperature: 25 c 77 f led reverse (on) current, ma 0 1 2 3 4 ambient temperature, c -40 -20 5 0204060 80 85 aqv414e aqv412eh?aqv410eh?aqv414eh ambient temperature, c led dropout voltage, v 0C40 C20 20 40 60 80 85 1.5 1.4 1.3 1.2 1.1 1.0 0 50ma 30ma 20ma 10ma 5ma 20 40 60 80 140 120 100 C3 C2 C1C2.5 C1.5 C0.5 0.5 3 1.5 2.5 12 C20 C40 C60 C80 C100 C120 C140 aqv410eh aqv414e aqv414eh current, ma voltage, v all rights rese r v ed ?c opyright matsushita elect r ic w o r k s , ltd.
gu-e photomos (aqv414e, aqv41 ? eh) 8-(2). current vs. voltage characteristics of output at mos portion measured portion: between terminals 4 and 6; ambient temperature: 25 c 77 f 9. off state leakage current vs. load voltage characteristics sample: all types; measured portion: between terminals 4 and 6; led current: 5 ma; ambient temperature: 25 c 77 f 10. operate (off) time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 0.2 0 0.4 0.6 -0.2 -0.4 -0.6 -1 -0.5 0.50 1 aqv412eh voltage, v current, a off state leakage current, a 20 060 40 80 100 load voltage, v 10 C3 10 C6 10 C9 10 C12 aqv410eh aqv412eh aqv414eh aqv414e operate (off) time, ms 0 2.0 4.0 6.0 8.0 led forward current, ma 10.0 10 20 30 40 50 aqv414e aqv410eh aqv414eh aqv412eh 11. reverse (on) time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 12. output capacitance vs. applied voltage characteristics measured portion: between terminals 4 and 6; frequency: 1 mhz; ambient temperature: 25 c 77 f reverse (on) time, ms led forward current, ma 10 20 30 40 50 6010 020304 05060 0.5 0.4 0.3 0.2 0.1 0 aqv414e aqv410eh,aqv414eh aqv412eh output capacitance, pf 0 400 300 200 100 applied voltage, v 10 20 30 40 50 60 500 aqv412eh aqv410eh?aqv414eh?aqv414e all rights rese r v ed ?c opyright matsushita elect r ic w o r k s , ltd.
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